On the impact of pure PVC and (PVC: Ti) interlayer on the conduction mechanisms and physical parameters of classic metal-semiconductor (MS) Schottky diodes (SDs)

In this study, to determine the impacts of PVC and (PVC: Ti) interlayer on the basic electrical parameters and conduction mechanisms, Au/n-Si (MS), Au/PVC/n-Si (MPS1), and Au/(PVC: Ti)/n-Si (MPS2) SDs were grown onto the same n-Si wafer. The prepared Ti nanoparticles were analyzed with the use of the XRD, SEM, and Energy-Dispersive (EDX) techniques. The average size of the crystallites was estimated to be 31 nm using the Debye-Scherrer formula. The basic electrical parameters of the MS, MPS1, and MPS2 type SDs were obtained based on Thermionic-emission (TE) theory, modified-Norde, and Cheung functions by using the forward bias I-F-V-F measurements and they were compared to each other. The energy distribution of surface-states (N-ss) of them was also obtained from these. All results show that the use of PVC and (PVC: Ti) interlayer leads to improved performance of MPS type SDs in terms of lower values of ideality-factor (n), leakage-current, N-ss, and higher values of barrier-height (BH), rectification-ratio (RR).