Ti₃C₂O₂ MXene single-layer as a nanoscale transport device

We considered Ti3C2O2 MXene single-layers with stepped edges as a nanoscale field effect transistor (FET) device. Our model device contains stepped edges at the interface of Ti3C2O2 and Ti2CO2 segments, and a top gate. We suggest that Ti2CO2 semiconducting device region can be obtained by etching the central part of a Ti3C2O2 single-layer. We determined the device characteristic of the proposed device in non-equilibrium Green's function (NEGF) calculations and observed the transistor behavior. The current through the device is controllable by the total amount of accumulated charge on the gate electrode. Our findings should be applicable to a large number of MXenes: Starting from M3C2O2 MXene single-layers, nanoscale FETs could be produced using conventional mask and etching lithography techniques.