Narrow-band n-GaN/n-Si isotype heterojunction photodiode: A simplified approach for photodiode development

An innovative approach has been explored to fabricate a high-performance photodiode in semiconductor device production, utilizing the thermal evaporation technique to grow GaN thin films. Structural analyzes were conducted on both as-deposited and annealed samples, and their properties were determined using various characterization techniques, including FESEM, XRD, XPS, Hall effect, photoluminescence, and UV-Vis spectrophotometer measurements. Valuable information has been gained about the potential of this alternative approach for fabricating GaN-based electronic devices. In this study, Al/n+-GaN/n-Si/Ag (as-deposited GaN) and Al/n-GaN/n-Si/Ag (annealed GaN) structures have been fabricated. It was found that the device produced from the as-deposited GaN thin film exhibited better performance than the annealed one. The isotype heterojunction n+-GaN/n-Si photodiode exhibited exceptional performance in detecting NIR light at a wavelength of 1050 nm under a 0 V bias. It has a full-width at half-maximum (FWHM) value of 120 nm and achieved a photoresponsivity value of 355 mA/W at a light output of 10 mW/cm(2). It is further supported by its external quantum efficiency of 42% and detectivity value of 6.93x10(11) Jones at the peak wavelength and very fast response speed with similar to 33 mu s rise/fall times. These findings highlight the potential of photodiode as an efficient narrow-band in the NIR region.