Optimization of a Solution-Processed TiO_<i>x</i>/(n)c-Si Electron-Selective Interface by Pre- and Postdeposition Treatments

Developing a vacuum-free and low-temperature deposition technique for dopant-free carrier-selective materials without sacrificing their performance can reduce the fabrication cost and CO2 footprint of silicon heterojunction (SHJ) solar cells. In this contribution, to activate the full capacity of the solution-processed TiOx as an electron-selective passivation contact, the effects of various pre- and postdeposition treatments on the passivation quality and contact resistivity are investigated simultaneously. It is demonstrated that the electrical properties of a thin TiOx layer spin-coated on an n-type silicon substrate can be remarkably improved through tailor-made pre- and postdeposition treatments. A notable low surface recombination velocity (SRV) of 6.54 cm/s and a high implied open-circuit voltage (iV(oc)) of 706 mV are achieved. In addition, by inserting a 1 nm LiFx buffer layer between TiOx and Al metal contact, a low contact resistivity (rho c) of 15.4 m Omegacm(2) is extracted at the n-Si/SiOx/TiOx heterojunction. Our results bring the solution-processed TiOx electrical properties to a level on par with those of state-of-the-art pure TiOx layers deposited by other techniques. Chemical and electrical characterizations elucidate that the improved electrical properties of the investigated Si/SiOx/TiOx heterojunction are mediated by the concomitant involvement of chemical and field-effect passivation.