Mixed halide perovskite compound thin film with large cation guanidinium and applications: MIS (Au/GUAPbI3-xClx/p-Si/Al) and p-FET (Al/p-Si/SiO2/GUAPbI3-xClx/Al)

In recent years, perovskite semiconductors, which have demonstrated their excellent compatibility and material diversity in the fabrication of optoelectronic devices, have become even more important with large organic cations. The guanidinium is one of the most important organic cations. However, the effect of chlorine doping on guanidinium cation-based perovskite film (GUAPbI3-xClx) formation and device applications have not yet been investigated. Therefore, the GUAPbI3-xClx perovskite film and its electrical role were examined in this study. The results of film characterization have shown that the perovskite film has a morphology forming crossed networks, resulting in a 2D/3D heterostructure. On the other hand, the MIS and FET devices fabricated using GUAPbI3-xClx perovskite film as an interlayer and channel layer have the architectures Au/GUAPbI3-xClx/p-Si/Al and Al/p-Si/ SiO2/GUAPbI3-xClx/Al, respectively. The Au/GUAPbI3-xClx/p-Si/Al device has exhibited better rectification, reverse-bias current, and response to frequency changes than the reference device. Moreover, the Al/p-Si/SiO2/ GUAPbI3-xClx/Al device has promising average value of the performance parameters; Vth:-5.06 V, Ion-off ratio: 4.09x106 and & mu;h: 0.196 cm2/Vs (the highest one measured was 0.410 cm2/Vs). The device performance pa-rameters have affected by the directionally limited carrier transport behavior of the 2D/3D perovskite heterostructure.