High resistivity and low dielectric loss of LuFe<sub>1-<i>x</i></sub>Os<sub><i>x</i></sub>O<sub>3</sub> (<i>x</i>=0.0-0.10) ferrites
Creators
- 1. Istanbul Bilgi Univ, Fac Engn & Nat Sci, Dept Mech Engn, TR-34060 Eyupsultan, Istanbul, Turkiye
- 2. Biruni Univ, Fac Engn & Nat Sci, Dept Biomed Engn, TR-34010 Istanbul, Turkiye
- 3. Lamar Univ, Dept Phys, Beaumont, TX 77710 USA
- 4. Eskisehir Tech Univ, Fac Sci, Dept Phys, Yunusemre Campus, TR-26470 Eskisehir, Turkiye
Description
LuFe1-xOsxO3 (x = 0, 0.05, and 0.10) compounds were synthesized and their resistivity, real and imaginary portion of the impedance and frequency-dependent loss tangent were examined at varied temperature settings (from - 100 degrees C to 100 degrees C by 20 degrees C step). Impedance and resistivity values increased as a result of the doping procedure, whereas activation and loss tangent values decreased. According to the X-ray photoelectron spectroscopy (XPS) study, Lu possesses a 3 + oxidation state, and the oxygen 1s spectrum displayed peaks for lattice oxygen and oxygen vacancy. Particle agglomeration and void formation were visible in scanning electron microscopy (SEM) pictures. Single and double oxygen vacancies and ion hopping between Fe2+ and Fe3+ ions were responsible for the reported activation energies. The frequency-dependent loss tangent results showed that all compounds have a highly low loss factor even at 100 degrees C.
Files
bib-6333d5e4-4234-4e1c-b992-1f9b153f1435.txt
Files
(308 Bytes)
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