Performance improvement of GaN-based microdisk lasers by using a PEALD-SiO2 passivation layer
Creators
- 1. Nanjing Univ Posts & Telecommun, Coll Telecommun & Informat Engn, Nanjing 210003, Peoples R China
- 2. Bolu Abant Izzet Baysal Univ, Phys Dept, TR-14030 Bolu, Turkiye
Description
Dry-etching is often utilized to shape GaN-based materials. However, it inevitably causes plenty of sidewall defects as non-radiative recombination centers and charge traps that deteriorate GaN-based device performance. In this study, the effects of dielectric films deposited by plasma-enhanced atomic layer deposition (PEALD) and plasma-enhanced chemical vapor deposition (PECVD) on GaN-based microdisk laser performance were both investigated. The results demonstrated that the PEALD-SiO2 passivation layer largely reduced the trap-state density and increased the non-radiative recombination lifetime, thus leading to the significantly decreased threshold current, notably enhanced luminescence efficiency and smaller size dependence of GaN-based microdisk lasers as compared with the PECVD-Si3N4 passivation layer.
Files
bib-1865da33-1b7f-4625-9c45-fef4bbd3b447.txt
Files
(231 Bytes)
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