A 2-6 GHz High Efficiency Power Amplifier Design for Communication Systems

In this paper, Gallium Nitride (GaN) power amplifier (PA) design with 6W (37.78 dBm) output power operating in the 2-6 GHz frequency band is presented for use in wireless communications. This PA is designed to be implemented on the Rogers RT5870 dielectric substrate. Cree CGHV1F006S model transistor is used as GaN transistor. The performance of the designed PA is evaluated by making small and large signal simulations. The PA offers a small signal gain of 9.6 dB over the frequency band of 2-6 GHz. The simulation results show that when 28 dBm of power is applied to the input of the PA, the PA provides 37.6 dBm of output power and offers a power-added efficiency (PAE) of 44% to 50% over the band.