Published January 1, 2022
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Impact of the Low Temperature Ohmic Contact Process on DC and Forward Gate Bias Stress Operation of GaN HEMT Devices
Creators
- 1. Bilkent Univ, Nanotechnol Res Ctr NANOTAM, TR-06800 Ankara, Turkey
- 2. Bilkent Univ, Nanotechnol Res Ctr, TR-06800 Ankara, Turkey
Description
In AlGaN/GaN high electron mobility transistors (HEMTs), high temperature processes (such as ohmic annealing with >800 degrees C value) could deform the crystal structure and induce trap stateswithin the bulk and surface. Expanded defect densities cause crucial problems, such as threshold voltage (Vth) instability, current collapse, and high leakages. In this work, a low temperature ohmic contact process (630 degrees C, 10 minutes) is adopted with recess etch, and contact resistances <0.1 Omega.mm with low sheet resistances are achieved. The positive impact of this low thermal budget process on surfacemorphology, DC operation, long-term stability, and forward gate bias stress of the device is studied.
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