Published January 1, 2022
| Version v1
Journal article
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Investigation of parameters of new MAPD-3NM silicon photomultipliers
Creators
- 1. Bursa Uludag Univ, Fac Arts & Sci, Dept Phys, TR-16059 Bursa, Turkey
- 2. Lusofona Univ, IDEGI, Campo Grande 376, P-1749024 Lisbon, Portugal
- 3. Inst Radiat Problems ANAS, B Vahabzade Str 9, Baku, Azerbaijan
- 4. CTU, Inst Expt & Appl Phys, Husova 240-5, Prague 11000, Czech Republic
- 5. UWB Pilsen, Fac Elect Engn, Univ 26, Plzen 30614, Czech Republic
Description
In the presented work, the parameters of a new MAPD-3NM-II photodiode with buried pixel structure manufactured in cooperation with Zecotek Company are investigated. The photon detection efficiency, gain, capacitance and gamma-ray detection performance of photodiodes are studied. The SPECTRIG MAPD is used to measure the parameters of the MAPD-3NM-II and scintillation detector based on it. The obtained results show that the newly developed MAPD3NM-II photodiode outperforms its counterparts in most parameters and it can be successfully applied in space application, medicine, high-energy physics and security.
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