Yayınlanmış 1 Ocak 2022 | Sürüm v1
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Manipulation of magnetic anisotropy by voltage induced strain in Co2MnAl/PMN-PT heterostructure

  • 1. Gebze Tech Univ, Inst Nanotechnol, TR-41400 Gebze, Kocaeli, Turkey
  • 2. Yildiz Tech Univ, Dept Phys, TR-34210 Esenler, Istanbul, Turkey
  • 3. Gebze Tech Univ, Dept Phys, TR-41400 Gebze, Kocaeli, Turkey

Açıklama

We have investigated the effect of an external electric field on the magnetic properties of Co2MnAl thin films deposited on a lead magnesium niobate-lead titanate (PMN-PT) (011) substrate. Stain-induced magnetoelectric coupling affects the magnetic properties of the Co2MnAl/PMN-PT system. The piezo-strain induced by applying an external field normal to the surface induces only in-plane strain, which leads to the rotation of easy-axis orientation of Co2MnAl from [100] to [ 01 1 over bar ] direction. The remanent magnetization states and coercivity of the Co2MnAl film vary significantly and asymmetrically with the applied voltage due to anisotropic strain originating from PMN-PT. Electrical control of magnetic anisotropy in a Co2MnAl Heusler compound at room temperature will be of interest for realizing next-generation magnetoelectric random access memory devices. Published under an exclusive license by AIP Publishing.

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