Published January 1, 2022
| Version v1
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Radiation hardness study using SiPMs with single-cell readout
Creators
- 1. Natl Res Nucl Univ MEPhI Moscow Engn Phys Inst, Kashirskoe Shosse 31, Moscow 115409, Russia
- 2. Univ Hamburg, Luruper Chaussee 149, D-22761 Hamburg, Germany
- 3. Lomonosov Moscow State Univ, Skobeltsyn Inst Nucl Phys, 1 2,Leninskie Gory,GSP-1, Moscow 119991, Russia
Description
A dedicated single-cell SiPM structure is designed and measured to investigate the radiation damage effects on the gain and turn-off voltage of SiPMs exposed to a reactor neutron fluence up to Phi = 5e13 cm(-2). The cell has a pitch of 15 mu m. The fluence dependence of gain and turn-off voltage are reported. A reduction of the gain by 19% and an increase of v(off)by asymptotic to 0.5 V is observed after Phi = 5e13 cm(-2).
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