Published January 1, 2021
| Version v1
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Raman spectroscopy of GaSe and InSe post-transition metal chalcogenides layers
Creators
- 1. Univ Warsaw, Fac Phys, Inst Expt Phys, Pasteura 5, PL-02093 Warsaw, Poland
- 2. Univ Cambridge, Cambridge Graphene Ctr, 9 JJ Thomson Ave, Cambridge CB3 0FA, England
- 3. Univ Manchester, Natl Graphene Inst, Booth St E, Manchester M13 9PL, Lancs, England
- 4. Skolkovo Inst Sci & Technol, Nobel St 3, Moscow 143026, Russia
Description
III-VI post-transition metal chalcogenides (InSe and GaSe) are a new class of layered semiconductors, which feature a strong variation of size and type of their band gaps as a function of number of layers (N). Here, we investigate exfoliated layers of InSe and GaSe ranging from bulk crystals down to monolayer, encapsulated in hexagonal boron nitride, using Raman spectroscopy. We present the N-dependence of both intralayer vibrations within each atomic layer, as well as of the interlayer shear and layer breathing modes. A linear chain model can be used to describe the evolution of the peak positions as a function of N, consistent with first principles calculations.
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