Yayınlanmış 1 Ocak 2010
| Sürüm v1
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Açık
In rich In1-xGaxN: Composition dependence of longitudinal optical phonon energy
Oluşturanlar
- 1. Univ Essex, Sch Comp Sci & Elect Engn, Colchester CO4 3SQ, Essex, England
- 2. Cornell Univ, Dept Elect & Comp Engn, Ithaca, NY 14853 USA
Açıklama
The composition dependence of longitudinal optical (LO) phonon energies in undoped and Mg-doped In1-xGaxN samples are determined using Raman spectroscopy in the range of Ga fraction from x = 0 to x = 56%. The LO phonon energy varies from 73 meV for InN to 83 meV for In(1-x)G(x)N with 56% Ga. Independent measurements of temperature dependent mobility at high temperatures where LO phonon scattering dominates the transport were also used to obtain the LO phonon energy for x = 0 and x = 20%. The results obtained from the two independent techniques compare extremely well. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Dosyalar
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Dosyalar
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