Synthesis of Al/HfO2/p-Si Schottky diodes and the investigation of their electrical and dielectric properties

As per this work, it is aimed to explore and analyze some dielectric characteristics-such as dielectric constant (epsilon'), dielectric loss (epsilon ''), loss tangent (tan delta), AC conductivity (sigma(ac)), and real (M') and imaginary (M '') parts of the electric modulus-of Al/HfO2/p-Si Schottky diode design based on temperature and frequency. The HfO2 layer was grown on p-Si substrates by atomic layer deposition method. Al metal was deposited on the upper part of this structure as Schottky contact by e-beam evaporation technique. This structure has been studied in different applied bias voltages and frequencies at temperature ranging between 300 and 360 K. The capacitance-voltage-frequency (C-V-f) and conductance-voltage-frequency (G/omega-V-f) characteristics of Al/HfO2/p-Si structure were measured in the frequency range of 10 kHz to 2 MHz by sweeping bias voltage levels (+/- 4 V, 50 mV steps). The experimental results and analyses confirmed that these dielectric properties of Al/HfO2/p-Si Schottky diode structure were very dependent on the frequency, bias voltage and temperature according to the presence of the interface states and distribution characteristics.