Design and Optimization of Cantilever Based RF-MEMS Shunt Switch for 5G Applications

This work reports on the design and optimization of a low voltage shunt MEMS switch for 5G mobile applications. As opposed to clamped-clamped beams conventionally serving as RF-MEMS shunt switches, the present switch design utilizes a fixed-free cantilever beam in a shunt configuration to minimize the actuation voltage requirements. Moreover, RF performance parameters (ON-state insertion loss and OFF-state signal isolation) for the proposed switch design are optimized by means of extensive high-frequency simulations to enable the use of such devices in mm-wave regime. To critically analyze the key controlling factors affecting switch performance, a parameterized study on the geometrical parameters of the proposed topology is performed. The simulations were carried out using commercially available finite element solvers (CoventorWare (R) and HFSS) which validate the low-voltage operation of the reported switch with actuation voltage as low as 7.5V while maintaining the RF insertion loss and RF isolation values below -0.3dB and above -36dB, respectively, for frequencies up to 45GHz.