Published January 1, 2011
| Version v1
Journal article
Open
Barrier lowering effect and dark current characteristics in asymmetric GaAs/AlGaAs multi quantum well structure
Creators
- 1. Akdeniz Univ, Div Phys Educ, Dept Secondary Educ Sci & Maths, TR-07058 Antalya, Turkey
- 2. Anadolu Univ, Dept Phys, TR-26470 Eskisehir, Turkey
Description
In this study, we investigate dark current voltage characteristics of GaAs/AlGaAs staircase-like asymmetric multiquantum well structure at various temperatures experimentally. The activation energy is calculated by using Arrhenius plots at different voltages. It is found that the activation energy decreased with increasing electric field. This result is evaluated using a barrier lowering effect which is a combination of geometrical and Poole-Frenkel effects. Measured dark current density-voltage (J-V) characteristics compared with the Levine model, 3D carrier drift model and the emission capture model. The best agreement with the experimental results of dark current densities is obtained by the Levine model.
Files
bib-e149b66f-7cd4-4b3f-8855-594faca9a053.txt
Files
(221 Bytes)
| Name | Size | Download all |
|---|---|---|
|
md5:674bb04169c35248db79525caba7ed15
|
221 Bytes | Preview Download |