Low Leakage Current Operation of Carbon Nanotube Network Thin-Film Transistors at 100 Degree Celsius

In this work we present the elevated temperature operation of carbon nanotube thin film transistors up to 100 degrees C in air ambient. It is demonstrated that for semiconducting nanotubes the OFF current leakage does not increase and the high ON/OFF ratio of transistors consisting of semiconducting nanotubes is preserved up to 100 degrees C. In addition, we investigate the factors affecting the operation of carbon nanotube transistors at high temperature for a range of source-to-drain spacing and metallic tube contents. The influence of change in tube-tube and tube-metal contact resistance on the device characteristics at high temperature is demonstrated.