Published January 1, 2011
| Version v1
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Epitaxial growth and electrical characterization of germanium
Creators
- 1. IMEM CNR, I-43124 Parma, Italy
- 2. Gazi Univ, Dept Phys, Arts & Sci Fac, TR-06500 Ankara, Turkey
Description
Ge homojunctions were deposited by means of Metal Organic Vapour Phase Epitaxy (MOVPE) on Ge substrates at 550 degrees C and 675 degrees C, using AsH3 as n-type dopant. Ge-n/Ge-p, GaAsn/InGaPn/Ge-n/Ge-p and Ge-n/Ge-p/Ge-p structures were prepared and studied, where n and p identify the layer or substrate doping. Vertical mesa junctions were obtained on the above structures by using conventional photolithographic and evaporation techniques. The junctions were characterized by I-V measurements under dark and illumination conditions and by EBIC technique. It has been observed that the samples grown at lower temperature showed better rectifying I-V characteristics and light conversion efficiency while EBIC results may suggest that a high As diffusion is present in the samples grown at higher temperature. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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