Published January 1, 2011
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Ge/SiGe Quantum Well p-i-n Structures for Uncooled Infrared Bolometers
- 1. MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA
Description
The temperature dependence of current is investigated experimentally for silicon-germanium (Si-Ge) multi-quantum-well p-i-n devices on Si substrates as uncooled bolometer active layers. Temperature coefficient of resistance values as high as -5.8%/K are recorded. This value is considerably higher than that of even commercial bolometer materials in addition to being well above the previous efforts based on CMOS compatible materials.
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