Published January 1, 2011
| Version v1
Conference paper
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Superconductivity in MBE grown InN
Creators
- 1. Univ Essex, Sch Comp Sci & Elect Engn, Wivenhoe Pk, Colchester CO4 3SQ, Essex, England
- 2. Anadolu Univ, Fac Sci, Dept Phys, TR-26470 Eskisehir, Turkey
Description
We present the experimental investigation of superconductivity in unintentionally doped MBE grown InN samples with various InN film thicknesses. A significant change in resistivity was observed at 3.82K, for an 1080 nm InN layer with carrier concentration n(3D) = 1.185x10(19) cm(-3). However, no significant resistance change was observed in the case of InN samples with carrier density of 1.024x10(19) cm(-3), 1.38x10(19) cm(-3), and thicknesses of 2070 and 4700 nm, respectively.
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