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Published January 1, 2011 | Version v1
Journal article Open

The effects of the intense laser field on donor impurities in a cylindrical GaxIn1-xNyAs1-y/GaAs quantum dot under the electric field

Creators

  • 1. Cumhuriyet Univ, Dept Phys, TR-58140 Sivas, Turkey
  • 2. Univ Antioquia, Inst Fis, Medellin 1226, Colombia
  • 3. Dokuz Eylul Univ, Dept Phys, TR-35160 Izmir, Turkey

Description

For different nitrogen and indium concentrations, intense laser field (ILF) effect on donor impurity binding energy in a cylindrical GaxIn1-xNyAs1-y/GaAs quantum dot (QD) has been studied. Results show that ILF creates an additional confinement on the electronic and impurity states in QD and increases nitrogen and indium concentration effects on electronic states. (C) 2011 Elsevier B.V. All rights reserved.

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