Yayınlanmış 1 Ocak 2011
| Sürüm v1
Dergi makalesi
Açık
The effects of the intense laser field on donor impurities in a cylindrical GaxIn1-xNyAs1-y/GaAs quantum dot under the electric field
Oluşturanlar
- 1. Cumhuriyet Univ, Dept Phys, TR-58140 Sivas, Turkey
- 2. Univ Antioquia, Inst Fis, Medellin 1226, Colombia
- 3. Dokuz Eylul Univ, Dept Phys, TR-35160 Izmir, Turkey
Açıklama
For different nitrogen and indium concentrations, intense laser field (ILF) effect on donor impurity binding energy in a cylindrical GaxIn1-xNyAs1-y/GaAs quantum dot (QD) has been studied. Results show that ILF creates an additional confinement on the electronic and impurity states in QD and increases nitrogen and indium concentration effects on electronic states. (C) 2011 Elsevier B.V. All rights reserved.
Dosyalar
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Dosyalar
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