Published January 1, 2013
| Version v1
Journal article
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Ellipsometry studies of Si/Ge superlattices with embedded Ge dots
- 1. TUBITAK BILGEM Natl Res Inst Elect & Cryptol, TR-41470 Gebze, Kocaeli, Turkey
- 2. Chalmers Univ Technol, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden
- 3. Max Planck Inst, Dept Expt Phys, Halle, Saale, Germany
Description
In this paper, we present an analysis for treating the spectroscopic ellipsometry response of Si/Ge superlattices (SLs) with embedded Ge dots. Spectroscopic ellipsometry (SE) measurement at room temperature was used to investigate optical and electronic properties of Si/Ge SLs which were grown on silicon (Si) wafers having aOE (c) 111 > crystallographic orientation. The results of the SE analysis between 200 nm and 1000 nm indicate that the SL system can effectively be described using an interdiffusion/intermixing model by assuming multicrystalline Si and Si1-x Ge (x) intermixing layers. The electronic transitions deduced from the analysis reveal Si-, Ge- and alloying-related critical energy points.
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