Published January 1, 2018
| Version v1
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Current Collapse-Free and Self-Heating Performances in Normally Off GaN Nanowire GAA-MOSFETs
Creators
- 1. Kyungpook Natl Univ, Inst Semicond Fus Technol, Daegu 702201, South Korea
- 2. Gazi Univ, Dept Phys, TR-06500 Ankara, Turkey
- 3. Kyungpook Natl Univ, Sch Elect Engn, Daegu 702201, South Korea
- 4. SOITEC, F-38190 Bernin, France
- 5. Grenoble Inst Technol, Inst Microelect Electromagnetism & Photon, F-38016 Grenoble, France
- 6. Korea Inst Sci & Technol, Semicond Mat & Device Lab, Seoul 02792, South Korea
Description
Normally off lateral GaN nanowire gate-all-around MOSFETs have been fabricated on the GaN-on-insulator substrate. The dynamic measurement proved that the devices with various nanowire heights exhibit current collapse-free characteristics implying that the electrons in the isolated nanowire channel do not suffer from trapping effects. However, the dc current level measured at high drain and gate voltage is reduced to approximately one half of the value measured in dynamic mode. This is attributed to the difficulty in heat dissipation because the suspended lateral nanowire channel is thermally isolated from the substrate. However, the heat dissipation is mitigated as the nanowire size increases.
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