Yayınlanmış 1 Ocak 1998 | Sürüm v1
Dergi makalesi Açık

Thermal hysteresis and memory effects in TlInS2

Açıklama

The dielectric susceptibility of layered TlInS2 was studied in the temperature range of successive phase transitions. Thermal hysteresis was observed in the incommensurate phase. It was shown that after annealing the crystal at a fixed temperature within the incommensurate phase, the existing temperature interval of this phase reveals noticeable broadening. The thermal memory effect is discussed using a defect density wave model.

Dosyalar

bib-44278e3c-d40d-444d-a989-b5f34ccbdd53.txt

Dosyalar (153 Bytes)

Ad Boyut Hepisini indir
md5:d8597d6431c98d8293ccc4d1ff4452d5
153 Bytes Ön İzleme İndir