Published January 1, 1998
| Version v1
Journal article
Open
Thermal hysteresis and memory effects in TlInS2
Description
The dielectric susceptibility of layered TlInS2 was studied in the temperature range of successive phase transitions. Thermal hysteresis was observed in the incommensurate phase. It was shown that after annealing the crystal at a fixed temperature within the incommensurate phase, the existing temperature interval of this phase reveals noticeable broadening. The thermal memory effect is discussed using a defect density wave model.
Files
bib-44278e3c-d40d-444d-a989-b5f34ccbdd53.txt
Files
(153 Bytes)
| Name | Size | Download all |
|---|---|---|
|
md5:d8597d6431c98d8293ccc4d1ff4452d5
|
153 Bytes | Preview Download |