MEMORY EFFECT IN LAYERED SEMICONDUCTOR TLINS2 WITH INCOMMENSURATE PHASE

The temperature dependence of pyroelectric current was studied for the ferroelectric-semiconductor crystal TlInS2 in the temperature range of commensurate and incommensurate phases. A remarkable shift of the lock-in transition point to lower temperatures has been observed on heating runs after turning from a heating to a cooling from different temperatures within the incommensurate phase. The observed effect was interpreted by the pinning of modulation due to mobile defects in the crystal having layered structure and was attributed to a kind of memory effect.