Published January 1, 1993
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COMPARISON OF INGAAS TRANSISTORS AS OPTOELECTRONIC MIXERS
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Optoelearonic mixing experiments with a range of different InGaAs transistor structures are reported. Results of measurements with both optically and electrically pumped devices show that heterojunction bipolar transistors offer the best performance in terms of the available signal/noise ratio, where values in excess of 30dB have been obtained.
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