EXCITATION-SPECTRA OF PHOTOINDUCED ABSORPTION IN A-SI-H

Photoinduced absorption (PA) of hydrogenated amorphous silicon (a-Si:H) was studied by excitation spectra analysis. The nonlinear PA response taken at different excitation photon energies was found to follow the corresponding absorption coefficient for intrinsic and p-doped samples in the 80-300 K temperature range. Significant contribution of the electronic PA in the observed response was demonstrated. Thermal effects are discussed. A simple model of trapping during the pump with consequent recombination from the localized state was found to be in good agreement with experimental observations. (C) 1995 American Institute of Physics.