The photoconductivity of CdxHg1-xTe (x=0.2-0.3) with an aluminum thin-film coating

The results of an experimental investigation of the photoconductivity of n- and p-CdxHg1-xTe X (x=0.2-0.3) deposited on the surface of aluminum thin films are presented. The results obtained are analyzed with allowance for the influence of the surface space-charge region and the recombination process in it. The values of the rate of surface recombination and the surface mobility of the charge carriers are determined from measurements of the photoconductivity and the barrier photocurrent. (C) 1997 American Institute of Physics.