Hot electron light-emitting and lasing semiconductor heterostructures - Type 1

A new light-emitting device has been proposed based on the incorporation of a GaAs quantum well on the n-side, and in the depletion region, of a Ga(1-x)A1(x)As p-n junction, where the bias is applied parallel to the layers. Light is emitted when electrons and holes on the n- and p-side of the structure, respectively, heated by the applied longitudinal electric field, transfer to the quantum well, by resonant tunnelling and thermionic emission (electrons) and diffusion (holes), where they recombine radiatively. The intensity of the light emitted is independent of the polarity of the applied bias. A demonstration of the device is presented and it is shown that the quantum well needs to be in the depletion region for light emission to occur. The device is modelled theoretically by solving the Schrodinger's and Poisson's equations self-consistently by including the carrier dynamics for hot electrons and holes. (C) 1995 Academic Press Limited