Published January 1, 2015
| Version v1
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Manifestation of the Memory Effect in Photovoltaic Properties of TlGaSe2 Ferroelectric-Semiconductor
- 1. Gebze Inst Technol, Dept Phys, TR-41400 Gebze, Kocaeli, Turkey
Description
In this study the results of optical, electrical and photovoltaic experiments which were carried out to investigate the memory effect of TlGaSe2 ferroelectric - semiconductor with incommensurate (INC) - phase are presented. The aim is to show that electrical and open circuit photovoltage measurements can be effectively used for the study of memory effect of INC - structure in TlGaSe2.
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