Published January 1, 2019
| Version v1
Conference paper
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A 2.7-2.9 GHz Class-F Power Amplifier with 50W Output Power, %75 Efficiency and Low Harmonic Content
Creators
- 1. Istanbul Tech Univ, Istanbul, Turkey
- 2. TUBITAK UME, Kocaeli, Turkey
- 3. Beykent Univ, Istanbul, Turkey
- 4. RFT Sci & Technol Co, Istanbul, Turkey
Description
In this paper, a 2.7-2.9 GHz class-F power amplifier with 50-Watt output power, 75% power added efficiency (PAE), 12 dB gain and low harmonic content was designed and simulated by using CGHV40050F Gallium Nitride high electron mobility transistor (GaN HEMT) and NI AWR Microwave Office v14. Realizations are planned to be made on Rogers RT5880 dielectric material which has 0.508 mm thickness and 2.20 dielectric constant.
Files
bib-95e90908-2773-44aa-afe6-e672a4552819.txt
Files
(273 Bytes)
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