Yayınlanmış 1 Ocak 2015
| Sürüm v1
Dergi makalesi
Açık
Energy Relaxation of Electrons in InGaN Quantum Wells
Oluşturanlar
- 1. Gazi Univ, Dept Phys, Fac Sci, TR-06500 Ankara, Turkey
- 2. Bilkent Univ, Nanotechnol Res Ctr, TR-06800 Bilkent, Turkey
Açıklama
In this study, electron energy relaxation mechanisms in HEMT structures with different In (x) Ga1-x N-channel quantum well (QW) widths are investigated. Theoretical value of the inelastic scattering rates is carried out at electron temperatures between 30 K (-243 A degrees C) < T (e) < 700 K (427 A degrees C). We used both the experimentally determined and calculated electron temperatures to estimate the energy relaxation rates of non-equilibrium electrons. In wide InGaN QWs, power loss of an electron is shown to be significantly smaller than that in the narrower QWs. (C) The Minerals, Metals & Materials Society and ASM International 2015
Dosyalar
bib-6f0c4f5a-5ed4-4b18-8d63-6bbd990f355e.txt
Dosyalar
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