Yayınlanmış 1 Ocak 2019
| Sürüm v1
Konferans bildirisi
Açık
Normally-off p-GaN gate InAlN/GaN HEMTs grown on silicon substrates
Oluşturanlar
- 1. Bilkent Univ, Nanotechnol Res Ctr, TR-06800 Ankara, Turkey
Açıklama
A normally-off InAlN/GaN high electron mobility transistor (HEMT) on Si substrate with a p-GaN gate is reported. Devices are fabricated on two different epitaxial structures, one containing a high resistive GaN buffer layer and one containing an AlGaN back-barrier, and the threshold voltage, drain current density, and buffer leakage current are compared. With the epitaxial structure containing a high resistive GaN layer, normally-off operation with a threshold voltage of +0.5 V is achieved. The threshold voltage is further increased to +2 V with the AlGaN back-barrier, and the buffer leakage current was improved by over an order of magnitude.
Dosyalar
bib-0a9b1f41-4530-4320-b96e-58657552a1f9.txt
Dosyalar
(208 Bytes)
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