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Radiation damage uniformity in a SiPM

   Bychkova, O.; Garutti, E.; Popova, E.; Stifutkin, A.; Martens, S.; Parygin, P.; Kaminsky, A.; Schwandt, J.

A dedicated single-cell SiPM structure is designed and measured to investigate the radiation damage effects on the gain and breakdown voltage of SiPMs exposed to a reactor neutron fluence up to Phi = 5e13 cm(-2). The cell has a pitch of 15 mu m. Results of the measurements and analysis of the IV-curves are presented. Impact of the self-heating effect was investigated. The radiation damage uniformity of 1 cell and 120 cells was checked up to U-ov = 1.7 V. Fluence dependence of the breakdown voltage from the current measurements U-bd(IV) was extracted and compared to that of the breakdown voltage from the gain measurements U-bd(G).

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