Published January 1, 2022
| Version v1
Journal article
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Radiation damage uniformity in a SiPM
Creators
- 1. Natl Res Nucl Univ MEPhI, Moscow Engn Phys, Kashirskoe Shosse 31, Moscow 115409, Russia
- 2. Univ Hamburg, Luruper Chaussee 149, D-22761 Hamburg, Germany
- 3. Lomonosov Moscow State Univ, Skobeltsyn Inst Nucl Phys, 1 2 Leninskie Gory,GSP 1, Moscow 119991, Russia
Description
A dedicated single-cell SiPM structure is designed and measured to investigate the radiation damage effects on the gain and breakdown voltage of SiPMs exposed to a reactor neutron fluence up to Phi = 5e13 cm(-2). The cell has a pitch of 15 mu m. Results of the measurements and analysis of the IV-curves are presented. Impact of the self-heating effect was investigated. The radiation damage uniformity of 1 cell and 120 cells was checked up to U-ov = 1.7 V. Fluence dependence of the breakdown voltage from the current measurements U-bd(IV) was extracted and compared to that of the breakdown voltage from the gain measurements U-bd(G).
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