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Published January 1, 2012 | Version v1
Journal article Open

Electronic band structure of GaAs/AlxGa1-xAs superlattice in an intense laser field

Creators

  • 1. Dokuz Eylul Univ, Fac Sci, Dept Phys, TR-35160 Izmir, Turkey
  • 2. Cumhuriyet Univ, Fac Sci, Dept Phys, TR-58140 Sivas, Turkey
  • 3. Univ Antioquia, Inst Fis, Medellin 1226, Colombia

Description

We perform theoretical calculations for the band structure of semiconductor superlattice under intense high-frequency laser field. In the frame of the non-perturbative approach, the laser effects are included via laser-dressed potential. Results reveal that an intense laser field creates an additional geometric confinement on the electronic states. Numerical results show that when tuning the strength of the laser field significant changes come in the electronic energy levels and density of states. (C) 2012 Elsevier B.V. All rights reserved.

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