Published January 1, 2014
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Radio frequency-H2O plasma treatment on indium tin oxide films produced by electron beam and radio frequency magnetron sputtering methods
Creators
- 1. Suleyman Demirel Univ, Arts & Sci Fac, Dept Chem, TR-32260 Isparta, Turkey
- 2. Suleyman Demirel Univ, Arts & Sci Fac, Dept Phys, TR-32260 Isparta, Turkey
- 3. KACST, Natl Ctr Math & Phys, Riyadh 11442, Saudi Arabia
Description
Electron beam and radio frequency (RF: 13.56 MHz) magnetron sputtering methods were used to obtain a highly transparent and conductive indium tin oxide (ITO) films. The coated thin films were treated by RF-H2O plasma in order to improve optical and electrical properties. RF-H2O plasma characteristics were investigated by optical emission spectroscopy during surface treatments. X-ray photoelectron spectroscopy results on O 1s core levels indicated the activated oxygen species in both amorphous and crystalline ITO structures. The structural, electrical and optical properties of ITO film were characterized by scanning electron microscopy, X-ray diffraction, and four-probe techniques. After the RF-H2O plasma treatment, the ITO films exhibited lower resistivity and better transparency due to the formation of radical species. (C) 2014 Elsevier B.V. All rights reserved.
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