Single-material MoS<sub>2</sub> thermoelectric junction enabled by substrate engineering
Creators
- 1. Bilkent Univ UNAM, Inst Mat Sci & Nanotechnol, TR-06800 Ankara, Turkiye
- 2. Univ Catholique Louvain UCLouvain, IMCN, NAPS, B-1348 Louvain la Neuve, Belgium
- 3. Bilkent Univ, Dept Phys, TR-06800 Ankara, Turkiye
- 4. Univ Glasgow, James Watt Sch Engn, Glasgow City G12 8LT, Scotland
Description
To realize a thermoelectric power generator, typically, a junction between two materials with different Seebeck coefficients needs to be fabricated. Such differences in Seebeck coefficients can be induced by doping, which renders it difficult when working with two-dimensional (2d) materials. However, doping is not the only way to modulate the Seebeck coefficient of a 2d material. Substrate-altered electron-phonon scattering mechanisms can also be used to this end. Here, we employ the substrate effects to form a thermoelectric junction in ultrathin, few-layer MoS2 films. We investigated the junctions with a combination of scanning photocurrent microscopy and scanning thermal microscopy. This allows us to reveal that thermoelectric junctions form across the substrate-engineered parts. We attribute this to a gating effect induced by interfacial charges in combination with alterations in the electron-phonon scattering mechanisms. This work demonstrates that substrate engineering is a promising strategy for developing future compact thin-film thermoelectric power generators.
Files
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