Published January 1, 2011
| Version v1
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A novel field effect transistor with dielectric polymer gel
Creators
- 1. Gebze Inst Technol, Dept Phys, TR-41400 Kocaeli, Turkey
- 2. Yildiz Tech Univ, Dept Phys, TR-34220 Istanbul, Turkey
- 3. Gebze Inst Technol, Dept Chem, TR-41400 Kocaeli, Turkey
Description
A novel organic-field effect transistor (OFET) has been fabricated. This device is original in the sense that it can be produced in ambient conditions with facile and cost-effective methods. Experimental results surprisingly revealed a high mobility value at the order of 0.38 cm(2)/Vs, and the gate voltage is also found to be lower than 1 V. The device exhibited excellent transistor characteristics at low voltages. Threshold voltage is around 0.26 V with 10(3) on/off ratio. The device design is based on high effective capacitance value of a polymer gel, 1 mu F, which is sandwiched between glass substrates on which source and drain electrodes were constructed. (C) 2010 Elsevier B.V. All rights reserved.
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