Kurt, G., Gulseren, M., Ghobadi, T., Ural, S., Kayal, O., Ozturk, M., Butun, B., Kabak, M. & Ozbay, E. (2019) Normally-off AlGaN/GaN MIS-HEMT with low gate leakage current using a hydrofluoric acid pre-treatment. SOLID-STATE ELECTRONICS , 158(None), 22-27.