1 Ocak 2018 Dergi makalesi Açık Erişim

Ipek, S.; Kilic, M. E.; Mogulkoc, A.; Cahangirov, S.; Durgun, E.

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  <identifier identifierType="URL">https://aperta.ulakbim.gov.tr/record/34513</identifier>
  <creators>
    <creator>
      <creatorName>Ipek, S.</creatorName>
      <givenName>S.</givenName>
      <familyName>Ipek</familyName>
      <affiliation>Istanbul Medeniyet Univ, Dept Engn Phys, TR-34700 Istanbul, Turkey</affiliation>
    </creator>
    <creator>
      <creatorName>Kilic, M. E.</creatorName>
      <givenName>M. E.</givenName>
      <familyName>Kilic</familyName>
    </creator>
    <creator>
      <creatorName>Mogulkoc, A.</creatorName>
      <givenName>A.</givenName>
      <familyName>Mogulkoc</familyName>
      <affiliation>Ankara Univ, Fac Sci, Dept Phys, TR-06100 Ankara, Turkey</affiliation>
    </creator>
    <creator>
      <creatorName>Cahangirov, S.</creatorName>
      <givenName>S.</givenName>
      <familyName>Cahangirov</familyName>
    </creator>
    <creator>
      <creatorName>Durgun, E.</creatorName>
      <givenName>E.</givenName>
      <familyName>Durgun</familyName>
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  <titles>
    <title>Semiconducting Defect-Free Polymorph Of Borophene: Peierls Distortion In Two Dimensions</title>
  </titles>
  <publisher>Aperta</publisher>
  <publicationYear>2018</publicationYear>
  <dates>
    <date dateType="Issued">2018-01-01</date>
  </dates>
  <resourceType resourceTypeGeneral="Text">Journal article</resourceType>
  <alternateIdentifiers>
    <alternateIdentifier alternateIdentifierType="url">https://aperta.ulakbim.gov.tr/record/34513</alternateIdentifier>
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  <relatedIdentifiers>
    <relatedIdentifier relatedIdentifierType="DOI" relationType="IsIdenticalTo">10.1103/PhysRevB.98.241408</relatedIdentifier>
  </relatedIdentifiers>
  <rightsList>
    <rights rightsURI="http://www.opendefinition.org/licenses/cc-by">Creative Commons Attribution</rights>
    <rights rightsURI="info:eu-repo/semantics/openAccess">Open Access</rights>
  </rightsList>
  <descriptions>
    <description descriptionType="Abstract">In contrast to the well-defined lattices of various two-dimensional (2D) systems, the atomic structure of borophene is sensitive to growth conditions and type of the substrate which results in rich polymorphism. By employing ab initio methods, we reveal a thermodynamically stable borophene polymorph without vacancies which is a semiconductor unlike the other known boron sheets, in the form of an asymmetric centered-washboard structure. Our results indicate that asymmetric distortion is induced due to Peierls instability which transforms a symmetric metallic system into a semiconductor. We also show that applying uniaxial or biaxial strain gradually lowers the obtained band gap and the symmetric configuration is restored following the closure of the band gap. Furthermore, while the Poisson's ratio is calculated to be high and positive in the semiconducting regime, it switches to negative once the metallicity is retrieved. The realization of semiconducting borophene polymorphs without defects and tunability of its electronic and mechanical response can extend the usage of boron sheets in a variety of nanoelectronic applications.</description>
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